Radiation hardness of TiO2 memristive junctions

IEEE Transactions on Nuclear Science

Volumn 57, Issue 3 PART 3, 2010, Pages 1640-1643

  Tong, William M ^a,b   Yang, J Joshua ^b   Kuekes, Philip J ^b   Stewart, Duncan R ^a,c   Williams, R Stanley ^b   DeIonno, Erica ^d   King, Everett E ^d   Witczak, Steven C ^d   Looper, Mark D ^d   Osborn, Jon V ^d  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b TransEL Corporation   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d AEROSPACE CORPORATION   (United States)

Author keywords

Memristor; Non volatie memory; Rad hard; Titanium oxide

Indexed keywords

GAMMA RADIATION; HYSTERETIC BEHAVIOR; IV CHARACTERISTICS; MEMRISTOR; MULTI STATE; NON-VOLATIE MEMORY; NON-VOLATILE; RAD HARD; RADIATION HARD; RADIATION HARDNESS; RESISTANCE STATE; TIO; ZERO BIAS CONDITIONS;

HYSTERESIS; TITANIUM;

TITANIUM OXIDES;

EID: 77953726701     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2045768     Document Type: Article

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