A study of the leakage current in TiN/HfO2/TiN capacitors

Microelectronic Engineering

Volumn 95, Issue , 2012, Pages 71-73

  Cimino, S ^a   Padovani, A ^c,d   Larcher, L ^c,d   Afanas'Ev, V V ^e   Hwang, H J ^a   Lee, Y G ^a   Jurczac, M ^b   Wouters, D ^b   Lee, B H ^a   Hwang, H ^a   Pantisano, L ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b IMEC   (Belgium)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d IUNET ^*  (Italy)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Defect generation; Internal photoemission; Metal Insulator Metal; Trap Assisted Tunneling

Indexed keywords

BARRIER HEIGHTS; CONSTANT VOLTAGE STRESS; CURRENT INCREASE; DEFECT GENERATION; DEFECT PRECURSORS; ELECTRICAL CHARACTERISTIC; ENERGY POSITION; INTERNAL PHOTOEMISSION; LOW VOLTAGES; METAL INSULATOR METALS; MOSFET PROCESS; OPTICAL ENERGY GAP; SI SURFACES; TRANSPORT SIMULATION; TRAP DENSITY; TRAP-ASSISTED-TUNNELING;

ENERGY GAP; HAFNIUM OXIDES; HYDROGEN; MIM DEVICES; PHOTOEMISSION; TITANIUM NITRIDE;

CAPACITORS;

EID: 84860374363     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.009     Document Type: Article

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