Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

Nanotechnology

Volumn 21, Issue 47, 2010, Pages

  Butcher, Brian ^a   He, Xiaoli ^a   Huang, Mengbing ^a   Wang, Yan ^b   Liu, Qi ^b   Lv, Hangbing ^b   Liu, Ming ^b   Wang, Wei ^a  

^a ALBANY STATE UNIVERSITY   (United States)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS GATE; ELECTRICAL PROPERTY; MEASUREMENT RESULTS; METALLIC FILAMENTS; OPERATION VOLTAGE; RESISTANCE VALUES; RESISTIVE SWITCHING; TIME-DEPENDENT; TOTAL DOSE; TOTAL-DOSE IRRADIATION; TRAP DENSITY;

ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; PROTONS;

PROTON IRRADIATION;

EID: 78650168122     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/47/475206     Document Type: Article

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