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Volumn 116, Issue 41, 2012, Pages 21948-21960

Initial stages of atomic layer deposition of tantalum nitride on SiO 2 and porous low-κ substrates modified by a branched interfacial organic layer: Chemisorption and the transition to steady-state growth

Author keywords

[No Author keywords available]

Indexed keywords

AMINE FUNCTIONALITY; ANALYTICAL METHOD; ANGLE-RESOLVED XPS; BRANCHED MOLECULES; CHEMICAL STATE; CHEMICAL TRANSFORMATIONS; IN-SITU; INITIAL STAGES; ORGANIC LAYERS; POLYETHYLENEIMINE; TANTALUM NITRIDES;

EID: 84867561090     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3086232     Document Type: Article
Times cited : (4)

References (74)
  • 3
    • 84867513270 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors.
    • International Technology Roadmap for Semiconductors, http://www.itrs.net, 2009.
    • (2009)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.