XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanism

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2068-2070

  Volpi, F ^a   Cadix, L ^a   Berthome G ^a   Blanquet, E ^a   Jourdan, N ^b   Torres, J ^b  

^a UNIV GRENOBLE ALPES   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Low k SiOCH dielectric; TaN ALD deposition; XPS analysis

Indexed keywords

CAPILLARITY; CHEMISTRY; COPPER; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DIFFUSION BARRIERS; FILM GROWTH; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE DIFFUSION; TANNING; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

45NM NODE; COPPER INTERCONNECTIONS; DIELECTRIC SURFACES; GROWTH MECHANISMS; LOW-K DIELECTRICS; LOW-K SIOCH DIELECTRIC; TAN ALD DEPOSITION; XPS ANALYSIS; XPS MEASUREMENTS; XPS STUDIES;

SURFACES;

EID: 52149092539     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.012     Document Type: Article

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