Hf O2 Si interface formation in atomic layer deposition films: An in situ investigation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 300-304

  Tallarida, Massimo ^a   Karavaev, Konstantin ^a   Schmeisser, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SILICON; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ADSORPTION GEOMETRIES; ATOMIC LAYERS; ATOMIC-LAYER DEPOSITIONS; IN-SITU; INITIAL STAGES; INTERFACE FORMATIONS; OXIDE LAYERS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

HAFNIUM;

EID: 59949098437     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021023     Document Type: Article

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