Atomic layer deposition of barriers for interconnect

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 288-291

  Besling, W ^a   Satta, A S ^b   Schuhmacher, J ^b   Abell, T ^c   Sutcliffe, V ^c   Hoyas, A M ^b   Beyer, G ^b   Gravesteijn, D ^a   Maex, K ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

^c imec   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; COPPER; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; FILM GROWTH; FILMS; INTEGRATED CIRCUIT INTERCONNECTS; LOW-K DIELECTRIC; NITRIDES; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; SUBSTRATES; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TUNGSTEN;

COPPER CONTAMINATION; DIFFERENT SUBSTRATES; GROWTH BEHAVIOUR; GROWTH CHARACTERISTIC; GROWTH INITIATION; INTERCONNECTED PORES; SUBSTRATE MATERIAL; SURFACE CONDITIONS;

DIELECTRIC MATERIALS;

EID: 84961744104     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014959     Document Type: Conference Paper

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