Initial growth and properties of atomic layer deposited TiN films studied by in situ spectroscopic ellipsometry

Physica Status Solidi C: Conferences

Volumn 2, Issue 12, 2005, Pages 3958-3962

  Langereis, E ^a   Heil, S B S ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELLIPSOMETRY; GROWTH (MATERIALS); NUCLEATION; NUMERICAL ANALYSIS; PLASMA APPLICATIONS; THIN FILMS;

ENERGY RANGE; FILM THICKNESS; GROWTH PROPERTIES; THERMAL OXIDE;

TITANIUM NITRIDE;

EID: 29144440861     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200562218     Document Type: Article

References (9)

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7. Re-analyzing the data of Patsalas et al. (Refs. [3] and [4]) shows that their conclusion is based on a calculation of the MFP that is erroneous. The MFP values should be a factor ∼10 lower than quoted in their work.
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