Enhancement of ALCVD™ TiN growth on Si-O-C and α-SiC:H films by O2-based plasma treatments

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 59-69

  Satta, A ^a   Baklanov, M ^a   Richard, O ^a   Vantomme, A ^b   Bender, H ^a   Conard, T ^a   Maex, K ^a,b   Li, W M ^c   Elers, K E ^c   Haukka, S ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ASM Microchemistry Oy   (Finland)

Author keywords

SiC:H dielectric; ALCVD TiN; O2 based plasma treatment; Si O C dielectrics

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; OPTIMIZATION; PLASMA APPLICATIONS; SILICON COMPOUNDS; TITANIUM NITRIDE;

ATOMIC LAYER CHEMICAL VAPOUR DEPOSITION (ALCVD);

DIELECTRIC FILMS;

EID: 0036133008     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00581-0     Document Type: Conference Paper

References (10)

1. Multilevel interconnections for ULSI and GSI era
2. Atomic layer epitaxy