Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2522-2525

  Furuya, Akira ^a,b   Yoneda, Katsumi ^a   Soda, Eiichi ^a   Yoshie, Toru ^a   Okamura, Hiroshi ^a   Shimada, Miyoko ^a   Ohtsuka, Nobuyuki ^a   Ogawa, Shinichi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEALS; SILANES; ULTRATHIN FILMS;

INCUBATION TIME; LINE RESISTANCE; LOW- K FILMS; PORE-SEAL FILMS;

PLASMAS;

EID: 29044449577     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2132324     Document Type: Article

References (17)

1. C. Basceri, in Proceedings of Advanced Mettalization Conference 2003, Montreal, 21-23 October 2003, p. 713.
2. K. Maex, M. R. Baklanov, D. Shamiryan, F. Lacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 98, 8793 (2003).
3. T. Mourier, in Proceedings of the International Interconnect Technology Conference 2003, San Francisco, 2-4 June 2003, p. 245.
4. M. Tada, in Proceedings of the International Electron Devices Meeting 2003, San Francisco, 13-15 December 2003, p. 845.
5. E. T. Ryan, Mater. Res. Soc. Symp. Proc. 863, B2.1 (2005).
6. A. R. Forohui and I. Bloomer, Phys. Rev. B 38, 1865 (1988).
7. K. Omote, Y. Ito, and S. Kawamura, Appl. Phys. Lett. 82, 544 (2003).
8. A. Matsushita, in Proceedings of the International Interconnect Technology Conference 2003, San Francisco, 2-4 June 2003, p. 147.
9. L. M. Han, J.-S. Pan, S.-M. Chen, N. Balasubramanian, J. Shi, L. S. Wong, and P. D. Foo, J. Electrochem. Soc. 148, F148 (2001).
10. H. Kim, J. Vac. Sci. Technol. B 21, 2231 (2003).
11. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and P. Mangiagalli, J. Vac. Sci. Technol. B 21, 2432 (2003).
12. H. Okamura and S. Ogawa, in Proceedings of the International Interconnect Technology Conference 2004, San Francisco, 7-9 June 2004, p. 42.
13. P.-T. Liu, T.-C. Chang, Y.-L. Yang, Y.-F. Cheng, and S. M. Sze, IEEE Trans. Electron Devices 47, 1733 (2000).
14. P.-T. Liu, T.-C. Chang, Y.-S. Mor, and S. M. Sze, Jpn. J. Appl. Phys., Part 1 38, 3482 (1999).
15. T. C. Chang, J. Electrochem. Soc. 146, 3802 (1999).
16. Z. Wang, A. Mitra, H. Wang, L. Huang, and Y. Yan, Adv. Mater. 13, 1463 (2001).
17. Y. Hayashi, in Proceedings of the International Interconnect Technology Conference 2004, San Francisco, 7-9 June 2004, p. 225.