Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1842-1849

  Posseme, N ^a   Chevolleau, T ^b   David, T ^a   Darnon, M ^b   Barnes, J P ^a   Louveau, O ^c   Licitra, C ^a   Jalabert, D ^a   Feldis, H ^a   Fayolle, M ^a   Joubert, O ^b  

^a CEA LETI   (France)

^b CNRS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Ashing; Downstream; Ellipsometric porosimetry; Low k; Oxidizing; Pore sealing; Reducing; RIE

Indexed keywords

CHEMICAL COMPOUNDS; CHEMISTRY; DIELECTRIC MATERIALS; DIFFUSION; METALLIC SOAPS; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; REACTIVE ION ETCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; TIN; TITANIUM; TITANIUM COMPOUNDS; TITANIUM NITRIDE; WEIGHT CONTROL;

ASH PLASMAS; BARRIER DEPOSITION; BLANKET WAFERS; CHEMICAL VAPOR DEPOSITION (CCVD); K VALUES; PATTERNED WAFERS; PLASMA CHEMISTRIES; POROUS DIELECTRICS; REACTIVE ION ETCHING (REI); RUTHERFORD BACKSCATTERING (RBS);

CHEMICAL VAPOR DEPOSITION;

EID: 48949115265     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.028     Document Type: Article

References (19)

1. http://www.itrs.net, 2007 update.
2. Posseme N., Chevolleau T., Joubert O., Vallier L., and Rochat N. J. Vac. Sci. Technol. B 22 (2004) 2772
3. Posseme N., Chevolleau T., David T., Darnon M., Louveau O., and Joubert O. J. Vac. Sci. Technol. B 25 6 (2007)
4. Furukawa Y., Wolters R., Roosen H., Snijders J.H.M., and Hoofman R. Microelectron. Eng. 76 (2004) 25
5. Furukawa Y., Patz M., Kokubo T., and Snijders J.H.M. Microelectron. Eng. 70 (2003) 267
6. Mourier T., Jousseaume V., Fusalba F., Lecornec Ch., Maury P., Passemard G., Haumesser PH., Maitrejean S., Cordeau M., Pantel R., Pierre F., Fayolle M., and Feldis H. IITC Proc. 245 (2003)
7. Beyer G., Satta A., Schumacher J., Maex K., Besling W., Kipela O., Sprey H., and Tempel G. Microelectron. Eng. 64 (2002) 233
8. Sil Yang C., Hun Yu Y., Lee H.J., Lee K.M., and Kyu Choi C. Thin Solid Films 506-507 (2006)
9. Besling W., Satta A., Schumacher J., Abelle T., Sutcliffe V., Hoyas A.-M., Beyer G., Gravesteijn D., and Maex K. IITC Proc. 288 (2002)
10. H. Donohue, J-C. Yeoh, S. Burgess, K. Buchanan, AMC Proc., (2002).
11. Chang T.C., Mor Y.S., Liu P.T., Tsai T.M., Chen C.W., Mei Y.J., and Sze S.M. Thin Solid Films 388 (2001) 632
12. Martin Hoyas A., Schumacher J., Whelan C.M., Celis J.P., and Maex K. Microelectron. Eng. 76 (2004) 32
13. Whelan C.M., Toan Le Q., Cecchet F., Satta A., Pireaux J.J., Rudolf P., and Maex K. Electrochem. Solid-State Lett. 7 (2004) F8-F10
14. Licitra C., Bertin F., Darnon M., Chevolleau T., Guedj C., Cetre S., Fontaine H., Zenasni A., and Chapelon L.L. Phys. Stat. Sol. (C) 5 5 (2008) 1278-1282
15. Posseme N., David T., Chevolleau T., and Joubert O. Electrochem. Solid-State Lett. 8 5 (2005) G112-G114
16. Ryan E., Freeman M., Svedberg L., Lee J.J., Guenther T., Connor J., Yu K., Sun J., and Gidley D.W. MRS Proc. 766 (2003)
17. Chang T.C., Mor Y.S., Liu P.T., Tsai T.M., Chen C.W., Mei Y.J., and Sze S.M. Thin Solid Films 398-399 (2001) 632-636
18. Maex K., Baklanov M.R., Shamiryan D., Iacopi F., Brongersma S.H., and Yanovitskaya Z.S. J. Appl. Phys. 93 (2003) 8793
19. Le Q.T., Baklanov M.R., Kesters E., Azioune A., Struyf H., Boullart W., Pireaux J.-J., and Vanhaelemeersch S. Electrochem. Solid-State Lett. 8 7 (2005) F21-F24