Assessment of distributed-cycling schemes on 45nm NOR flash memory arrays

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Miccoli, Carmine ^a   Monzio Compagnoni, Christian ^a   Chiavarone, Luca ^b   Beltrami, Silvia ^b   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Micron   (Italy)

^c IFN CNR   (Italy)

Author keywords

Flash memories; program erase cycling; semiconductor device modeling; semiconductor device reliability

Indexed keywords

ARRHENIUS LAW; CYCLING TEMPERATURES; DAMAGE RECOVERY; DEVICE OPERATIONS; EXPERIMENTAL TEST; MEMORY TECHNOLOGY; NOR FLASH MEMORY; PROGRAM/ERASE; SCALED TECHNOLOGIES; SECOND ORDER EFFECT; SEMICONDUCTOR DEVICE RELIABILITY;

ACTIVATION ENERGY; SEMICONDUCTOR DEVICE MODELS;

FLASH MEMORY;

EID: 84866634618     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241771     Document Type: Conference Paper

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