Experimental study of charge displacement in nitride layer and its effect on threshold voltage instability of advanced flash memory devices

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2007, Pages 76-80

  Tao, Guoqiao ^a   Nath, Som ^a   Ouvrard, Cedric ^a   Chauveau, Helene ^a   Dormans, Do ^a   Verhaar, Rob ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Charge conduction; Charge re distribution; Multi level flash; NVM data retention; RTN

Indexed keywords

CHARGE TRANSFER; STRESS MEASUREMENT; TELEGRAPH SYSTEMS; THRESHOLD VOLTAGE;

CHARGE CONDUCTION; CHARGE DISPLACEMENT; GATE STRESS MEASUREMENTS; RANDOM TELEGRAPH NOISE;

FLASH MEMORY;

EID: 39749084061     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2007.4378061     Document Type: Conference Paper

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