Random telegraph signal in flash memory: Its impact on scaling of multilevel flash memory beyond the 90-nm node

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 6, 2007, Pages 1362-1369

  Kurata, Hideaki ^a,b   Otsuga, Kazuo ^b   Kotabe, Akira ^b   Kajiyama, Shinya ^b   Osabe, Taro ^b   Sasago, Yoshitaka ^b   Narumi, Shunichi ^c   Tokami, Kenji ^c   Kamohara, Shiro ^c   Tsuchiya, Osamu ^c  

^a IEEE   (Japan)

^b HITACHI LTD   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Flash memories; Monte Carlo simulation; Multilevel cell; Random telegraph signals; Scaling

Indexed keywords

MEMORY CELLS; MULTILEVEL CELLS; RANDOM TELEGRAPH SIGNALS; SCALING;

AMPLITUDE MODULATION; COMPUTER SIMULATION; MONTE CARLO METHODS; TELEGRAPH; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 34249807647     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.897158     Document Type: Article

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