Recovery effects in the distributed cycling of flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 29-35

  Mielke, Neal ^a   Belgal, Hanmant P ^a   Fazio, Albert ^a   Meng, Qingru ^a   Righos, Nick ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED CYCLING; REALISTIC DELAYS;

ACTIVATION ENERGY; DIELECTRIC DEVICES; ELECTRON TRAPS; MATHEMATICAL MODELS; THERMAL EFFECTS;

FLASH MEMORY;

EID: 34250790753     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251188     Document Type: Conference Paper

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