Threshold-voltage instability due to damage recovery in nanoscale NAND flash memories

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2406-2414

  Miccoli, Carmine ^a,b   Monzio Compagnoni, Christian ^a,b   Beltrami, Silvia ^c   Spinelli, Alessandro S ^a,b,d   Visconti, Angelo ^c  

^a POLITECNICO DI MILANO   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c Numonyx   (Italy)

^d IFN CNR   (Italy)

Author keywords

Flash memories; program erase (PE) cycling; semiconductor device modeling; semiconductor device reliability

Indexed keywords

CUMULATIVE DISTRIBUTION; CYCLING TIME; DAMAGE RECOVERY; DATA RETENTION; NAND FLASH; NAND FLASH MEMORY; NANO SCALE; PROBABILITY LEVELS; PROGRAM/ERASE; READ OPERATION; SEMICONDUCTOR DEVICE MODELING; SEMICONDUCTOR DEVICE RELIABILITY;

ELECTRIC FIELDS; FLASH MEMORY; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PROBABILITY DISTRIBUTIONS; RECOVERY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES;

THRESHOLD VOLTAGE;

EID: 79960843918     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2150751     Document Type: Article

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