Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND flash memory arrays

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 604-610

  Compagnoni, Christian Monzio ^a   Miccoli, Carmine ^a   Mottadelli, Riccardo ^a   Beltrami, Silvia ^b   Ghidotti, Michele ^a   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx   (Italy)

^c IFN CNR   (Italy)

Author keywords

Flash memories; Program erase cycling; Semiconductor device modeling; Semiconductor device reliability

Indexed keywords

CELL DAMAGE; CUMULATIVE DISTRIBUTION; CYCLING CONDITIONS; CYCLING TIME; DECA-NANOMETER; DELAY FACTORS; EXPERIMENTAL INVESTIGATIONS; HIGHER TEMPERATURES; LOGARITHMIC TIME; NAND FLASH; NAND FLASH MEMORY; NANO SCALE; NEGATIVE SHIFT; PARAMETER VALUES; PARTIAL RECOVERY; PROGRAM/ERASE; SEMICONDUCTOR DEVICE MODELING; SEMICONDUCTOR DEVICE RELIABILITY; TIME INTERVAL; TUNNEL OXIDE]; VOLTAGE INSTABILITY; VOLTAGE TRANSIENTS;

ELECTRIC FIELDS; ELECTRIC LOSSES; NANOTECHNOLOGY; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THRESHOLD VOLTAGE; TRANSIENTS;

FLASH MEMORY;

EID: 77957923243     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488762     Document Type: Conference Paper

References (22)

1. S. Yamada, Y. Hiura, T. Yamane, K. Amemiya, Y. Ohshima, and K. Yoshikawa, "Degradation mechanism of Flash EEPROM programming after program/erase cycles," in IEDM Tech. Dig., pp. 23-26, 1993.
2. Y.-B. Park and D. K. Schroder, "Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a Flash EEPROM," IEEE Trans. Electron Devices, vol. 45, pp. 1361-1368, June 1998.
3. M. Park, K. Suh, K. Kim, S.-H. Hur, K. Kim, and W.-S. Lee, "The effect of trapped charge distributions on data retention characteristics of NAND Flash memory cells," IEEE Electron Device Lett., vol. 28, pp. 750-752, Aug. 2007.
4. A. Fayrushin, K. Seol, J. Na, S. Hur, J. Choi, and K. Kim, "The new program/erase cycling degradation mechanism of NAND Flash memory devices," in IEDM Tech. Dig., pp. 823-826, 2009.
5. C. Monzio Compagnoni, A. S. Spinelli, S. Beltrami, M. Bonanomi, and A. Visconti, "Cycling effect on the random telegraph noise instabilities of NOR and NAND Flash arrays," IEEE Electron Dev. Lett., vol. 29, pp. 941-943, August 2008.
6. K. Fukuda, Y. Shimizu, K. Amemiya, M. Kamoshida, and C. Hu, "Random telegraph noise in Flash memories - model and technology scaling," in IEDM Tech. Dig., pp. 169-172, 2007.
7. H. Kurata, K. Otsuga, A. Kotabe, S. Kajiyama, T. Osabe, Y. Sasago, S. Narumi, K. Tokami, S. Kamohara, and O. Tsuchiya, "Random telegraph signal in Flash memory: its impact on scaling of multilevel Flash memory beyond the 90-nm node," IEEE J. Solid-State Circuits, Vol. 42, pp. 1362-1369, 2007.
8. M. Kato, N. Miyamoto, H. Kume, A. Satoh, T. Adachi, M. Ushiyama, and K. Kimura, "Read-disturb degradation mechanism due to electron trapping in the tunnel oxide for low-voltage flash memories," in IEDM Tech. Dig., pp. 45-48, 1994.
9. R. Yamada, Y. Mori, Y. Okuyama, J. Yugami, T. Nishimoto, and H. Kume, "Analysis of detrap current due to oxide traps to improve flash memory retention," in Proc. IRPS, pp. 200-204, 2000.
10. R. Yamada, T. Sekiguchi, Y. Okuyama, J. Yugami, and H. Kume, "A novel analysis method of threshold voltage shift due to detrap in a multilevel Flash memory," in 2001 Symp. VLSI Tech. Dig., pp. 115-116, 2001.
11. J.-D. Lee, J.-H. Choi, D. Park, and K. Kim, "Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND Flash memory cells," in Proc. IRPS, pp. 497-501, 2003.
12. J.-D. Lee, J.-H. Choi, D. Park, and K. Kim, "Data retention characteristics of sub-100 nm NAND Flash memory cells," IEEE Electron Device Lett., Vol. 24, pp. 748-750, 2003.
13. J.-D. Lee, J.-H. Choi, D. Park, and K. Kim, "Effects of interface trap generation and annihilation on the data retention characteristics of Flash memory cells," IEEE Trans. Device and Materials Reliab., vol. 4, pp. 110-117, March 2004.
14. N. Mielke, H. Belgal, I. Kalastirsky, P. Kalavade, A. Kurtz, Q. Meng, N. Righos, and J. Wu, "Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling," IEEE Trans. Device and Materials Reliab., vol. 4, pp. 335-344, Sept. 2004.
15. N. Mielke, H. Belgal, A. Fazio, Q. Meng, and N. Righos, "Recovery effects in the distributed cycling of Flash memories," in Proc. IRPS, pp. 29-35, 2006.
16. C. Monzio Compagnoni, A. Ghetti, M. Ghidotti, A. S. Spinelli, and A. Visconti, "Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories," IEEE Trans. Electron Devices, vol. 57, pp. 321-327, Jan. 2010.
17. C. Monzio Compagnoni, R. Gusmeroli, A. S. Spinelli, A. L. Lacaita, M. Bonanomi, and A. Visconti, "Statistical model for random telegraph noise in Flash memories," IEEE Trans. Electron Devices, vol. 55, pp. 388-395, Jan. 2008.
18. G. J. Hemink, T. Tanaka, T. Endoh, S. Aritome, and R. Shirota, "Fast and accurate programming method for multi-level NAND EEPROMs," in 1995 Symp. VLSI Tech. Dig., pp. 129-130, 1995.
19. C. Monzio Compagnoni, R. Gusmeroli, A. S. Spinelli, and A. Visconti, "Analytical model for the electron-injection statistics during programming of nanoscale NAND Flash memories," IEEE Trans. Electron Devices, vol. 55, pp. 3192-3199, Nov. 2008.
20. C. Monzio Compagnoni, M. Ghidotti, A. L. Lacaita, A. S. Spinelli, and A. Visconti, "Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories," IEEE Electron Dev. Lett., vol. 30, pp. 984-986, Sept. 2009.
21. "JEDEC Standard JEP122E: Failure mechanisms and models for semiconductor devices," tech. rep., JEDEC Solid State Technology Association, March 2009.
22. C. Monzio Compagnoni, A. S. Spinelli, and A. L. Lacaita, "Experimental study of data retention in nitride memories by temperature and field acceleration," IEEE Electron Dev. Lett., vol. 28, pp. 628-630, July 2007.