Degradation of thin tunnel gate oxide under constant fowler-nordheim current stress for a flash EEPROM

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1361-1368

  Park, Young Bog ^a   Schroder, Dieter K ^b  

^a MOTOROLA INC   (United States)

^b Arizona State University   (United States)

Author keywords

Charge injection; Dielectric breakdown; EPROM; Impact ionization; Leakage current; Mos devices; Stress measurement; Tunneling

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; GATES (TRANSISTOR); IONIZATION OF SOLIDS; LEAKAGE CURRENTS; NONVOLATILE STORAGE; PROM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR STORAGE; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORIES (EEPROM); FOWLER-NORDHEIM (FN) CURRENT STRESS;

MOS DEVICES;

EID: 0032097823     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678579     Document Type: Article

References (26)

1. J. Eldridge, Flash memory goes mainstream, IEEE Spectrum, vol. 30, pp. 48-54, Oct. 1993.
2. S. Aritome, R. Shirota, G. Hemink, T. Endoh, and F. Masuoka, Reliability issues of flash memory cells, Proc. IEEE, vol. 81, pp. 776-787, May 1993.
3. G. Verma and N. Mielke, Reliability performance of ETOX based flash memories, in Proc. IRPS, 1988, pp. 158-166.
4. D. Crook, M. Domnitei, M. Webb, and J. Bonini, Evaluation of modern gate oxide technologies to process charging, in Proc. IRPS, 1993, pp. 255-261.
5. 2 films thermally grown on Si substrates in ultra-dry oxygen, IEEE Trans. Electron Devices, Vol. ED35, pp. 2245-2252, Dec. 1988.
6. 2 induced by Fowler-Nordheim emission, J. Appl. Phys., vol. 52, pp. 3491-3497, May 1981.
7. M. P. Fazan, M. Dutoit, C. Martin, and M. Ilegems, Charge generation in thin SiC>2 polysilicon-gate MOS capacitors, Solid State Electron., vol. 30, pp. 829-834, Aug. 1987.
8. S. K. Lai and D. R. Young, Effects of avalanche injection of electrons into silicon dioxide-generation of fast and slow interface states, J. Appl. Phys., vol. 52, pp. 6231-6240, Oct. 1981.
9. S. Holland, I. C. Chen, T. P. Ma, and C. Hu, On physical models for gate oxide breakdown, IEEE Electron Device Lett., Vol. EDL5, pp. 302-305, Aug. 1984.
10. I. C. Chen, S. E. Holland, and C. Hu, Electrical breakdown in thin gate and tunneling oxides, IEEE Trans. Electron Devices, Vol. ED32, pp. 41322, Feb. 1985.
11. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, Dynamic model of trapping-detrapping in SiC>2, J. Appl. Phys., vol. 58, pp. 2252-2261, Sept. 1985.
12. D. J. DiMaria, T. N. Theis, J. R. Kirtley, F. L. Pesavento, and D. W. Dong, Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films, J. Appl. Phys., vol. 57, pp. 1214-1238, Feb. 1985.
13. E. Harari, Dielectric breakdown in electrically stressed thin films of thermal SiO2, J. Appl. Phys., vol. 49, pp. 2478-2489, Apr. 1978.
14. D. J. DiMaria, E. Cartier, and D. Arnold, Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon, J. Appl. Phys., vol. 73, pp. 3367-3384, Apr. 1993.
15. D. K. Schroder, Semiconductor Material and Device Characterization. New York: Wiley, 1990, p. 253.
16. J. R. Brews, Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET, IEEE Trans. Electron Devices, Vol. ED26, pp. 1282-1291, Sept. 1979.
17. S. Horiguchi, T. Kobayashi, and K. Saito, Interface-trap generation modeling of Fowler-Nordheim tunnel injection into ultra-thin gate oxide, J. Appl. Phys., vol. 58, pp. 387-391, July 1985.
18. C. Tan, M. Xu, and Y. Wang, Application of the difference subthreshold swing analysis to study generation interface trap in MOS structures due to Fowler-Nordheim aging, IEEE Electron Device Lett., vol. 15, pp. 257-259, July 1994.
19. J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI. Boston, MA: Kluwer, 1991, pp. 94-98.
20. P. J. McWhorter and P. S. Winokur, Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxidesemiconductor transistors, Appl. Phys. Lett., vol. 48, pp. 133-135, Jan. 1986.
21. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1990, pp. 44648.
22. M.-S. Liang, C. Chang, Y. T. Yeow, C. Hu, and R. W. Brodersen, MOSFET degradation due to stressing of thin oxide, IEEE Trans. Electron. Devices, Vol. ED31, pp. 1238-1244, Sept. 1984.
23. M. S. Liang, S. Haddad, W. Cox, and S. Cagnina, Degradation of very thin gate oxide MOS devices under dynamic high field/current stress, in IEDM Tech. Dig., 1986, pp. 394-398.
24. 2 films, J. Electrochem. Soc., vol. 140, pp. 770-773, Mar. 1993.
25. 2 interface, IEEE Trans. Electron Devices, vol. 40, pp. 1251-1257, July 1993.
26. K. Naruke, S. Taguchi, and M. Wada, Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness, in IEDM Tech Dig., 1988, pp. 424-427.