Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 47-53

  Mori, Seiichi ^a   Araki, Yoshiko Yamaguchi ^a   Sato, Muneharu ^a   Meguro, Hisataka ^a   Tsunoda, Hiroaki ^a   Kamiya, Eiji ^a   Yoshikawa, Kuniyoshi ^a   Arai, Norihisa ^a   Sakagami, Eiji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEGRADATION; DIELECTRIC DEVICES; MOS DEVICES; NONVOLATILE STORAGE; OXIDES; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRON TRAPPING EFFECTS; FRENKEL-POOLE CARRIER CONDUCTION MECHANISM; NONVOLATILE MEMORY DEVICES; THRESHOLD VOLTAGE;

TRANSISTORS;

EID: 0029778572     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477592     Document Type: Article

References (11)

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