Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90-nm NAND flash memory cells

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 497-501

  Lee, Jae Duk ^a   Choi, Jeong Hyuk ^a   Park, Donggun ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Data retention; Endurance; Interface trap; NAND flash memory; Tunnel oxide

Indexed keywords

CAPACITORS; FLASH MEMORY; LEAKAGE CURRENTS; SILICON;

DATA RETENTION;

TRANSISTORS;

EID: 0037634385     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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