Analysis of detrap current due to oxide traps to improve flash memory retention

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 200-204

  Yamada, Ren ichi ^a   Mori, Yuki ^a   Okuyama, Yutaka ^a   Yugami, Jiro ^a   Nishimoto, Toshiaki ^a   Kume, Hitoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRON TUNNELING; MOS CAPACITORS; MOSFET DEVICES; THRESHOLD VOLTAGE;

FLASH MEMORIES; FOWLER-NORDHEIM STRESSING;

SEMICONDUCTOR STORAGE;

EID: 0033742029     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)