Fundamental limitations to the width of the programmed VT distribution of nor flash memories

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1761-1767

  Monzio Compagnoni, Christian ^a   Chiavarone, Luca ^b   Calabrese, Marcello ^b   Ghidotti, Michele ^a   Lacaita, Andrea L ^a,c   Spinelli, Alessandro S ^a,c   Visconti, Angelo ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx (Now Micron)   (Italy)

^c IFN CNR   (Italy)

Author keywords

Electron injection statistics; Flash memories; random telegraph noise (RTN); semiconductor device modeling

Indexed keywords

ELECTRON INJECTION STATISTICS; EXPERIMENTAL EVIDENCE; FLOATING GATES; FUNDAMENTAL LIMITATIONS; NOR FLASH MEMORY; PROGRAMMING ALGORITHMS; RANDOM TELEGRAPH NOISE; SCALING TRENDS; SEMICONDUCTOR DEVICE MODELING; STATISTICAL PROCESS; TECHNOLOGY NODES; VOLTAGE DISTRIBUTION;

CHARGE TRANSFER; ELECTRON INJECTION; ELECTRONS; ION EXCHANGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; TELEGRAPH; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 77955171612     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050543     Document Type: Article

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