Cycling effect on the random telegraph noise instabilities of NOR and NAND flash arrays

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 941-943

  Compagnoni, Christian Monsio ^a,b   Spinelli, Alessandro S ^a,b,c   Beltrami, Silvia ^d   Bonanomi, Mauro ^d   Visconti, Angelo ^d  

^a POLITECNICO DI MILANO   (Italy)

^b IUNET Italian University Nano Electronics Team   (Italy)

^c IFN CNR   (Italy)

^d Numonyx   (Italy)

Author keywords

Failure analysis; Flash memories; Random telegraph noise (RTN); Statistical analysis

Indexed keywords

FLASH MEMORY; TECHNOLOGY; TELEGRAPH; THRESHOLD VOLTAGE;

ACTIVE AREAS; FAILURE ANALYSIS; FLASH MEMORIES; NAND FLASH; NAND FLASH MEMORIES; RANDOM TELEGRAPH NOISE; RANDOM TELEGRAPH NOISE (RTN); READ OPERATIONS; STATISTICAL ANALYSIS; STRESS LEVELS; THRESHOLD VOLTAGE VARIATIONS; THRESHOLD-VOLTAGE INSTABILITY; TRAP DISTRIBUTIONS; TRAP GENERATION; VOLTAGE LEVELS;

NAND CIRCUITS;

EID: 48649103507     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000964     Document Type: Article

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