SCOPUS 정보 검색 플랫폼

Volumn 112, Issue 2, 2012, Pages

Study of barrier inhomogeneities in I-V-T and C-V-T characteristics of Al/Al 2O 3/PVA:n-ZnSe metal-oxide-semiconductor diode

(2) Sharma, Mamta a Tripathi, S K a

a PANJAB UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL SUBSTRATE; ALUMINA LAYERS; ANODIZATION METHOD; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; C-V MEASUREMENT; CHEMICAL BATH DEPOSITION TECHNIQUE; DEPLETION LAYER; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; INHOMOGENEITIES; METAL-OXIDE-SEMICONDUCTOR DIODE; POTENTIAL FLUCTUATIONS; REVERSE BIAS; RICHARDSON CONSTANT; SERIES RESISTANCES; TEMPERATURE DEPENDENCE;

ALUMINA; ELECTRIC RESISTANCE; SEMICONDUCTOR DIODES; TEMPERATURE DISTRIBUTION;

DIELECTRIC DEVICES;

EID: 84865461212 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4737589 Document Type: Article

Times cited : (70)

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