Analysis of the forward and reverse bias I-V and C-V characteristics on Al/PVA:n-PbSe polymer nanocomposites Schottky diode

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Tripathi, S K ^a   Sharma, Mamta ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; C-V MEASUREMENT; DEPLETION LAYER; FORWARD BIAS; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; INHOMOGENEITIES; IV CHARACTERISTICS; POLYMER NANOCOMPOSITE; POTENTIAL FLUCTUATIONS; REVERSE BIAS; RICHARDSON CONSTANT; SCHOTTKY DIODES; SERIES RESISTANCES; TUNNELING MECHANISM;

ELECTRIC RESISTANCE; NANOCOMPOSITES;

SCHOTTKY BARRIER DIODES;

EID: 84861746089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3698773     Document Type: Conference Paper

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