메뉴 건너뛰기




Volumn 161, Issue 11-12, 2011, Pages 1079-1087

Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J-V and C-V characteristics

Author keywords

Al P3OT ITO organic Schottky diodes; Interface state density; J V and C V characteristics; P3OT; Series resistance; XRD and SEM

Indexed keywords

INTERFACE STATE DENSITY; J-V AND C-V CHARACTERISTICS; ORGANIC SCHOTTKY DIODES; P3OT; SERIES RESISTANCE; XRD;

EID: 79957966155     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.03.019     Document Type: Article
Times cited : (32)

References (53)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.