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Volumn 161, Issue 11-12, 2011, Pages 1079-1087
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Extraction of the device parameters of Al/P3OT/ITO organic Schottky diode using J-V and C-V characteristics
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Author keywords
Al P3OT ITO organic Schottky diodes; Interface state density; J V and C V characteristics; P3OT; Series resistance; XRD and SEM
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Indexed keywords
INTERFACE STATE DENSITY;
J-V AND C-V CHARACTERISTICS;
ORGANIC SCHOTTKY DIODES;
P3OT;
SERIES RESISTANCE;
XRD;
CRYSTAL STRUCTURE;
DIODES;
SCANNING ELECTRON MICROSCOPY;
SCHOTTKY BARRIER DIODES;
THIN FILMS;
X RAY DIFFRACTION;
FILM PREPARATION;
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EID: 79957966155
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/j.synthmet.2011.03.019 Document Type: Article |
Times cited : (32)
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References (53)
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