Temperature dependence of reverse bias capacitance-voltage characteristics of Sn/p-GaTe Schottky diodes

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 242-246

  Coskun, Cevdet ^a   Aydogan, Sakir ^a   Efeoglu, Hasan ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE TECHNIQUE; DIRECTIONAL FREEZING METHOD; GALLIUM TELLURIDE; SCHOTTKY BARRIER HEIGHTS;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); METALLOGRAPHIC MICROSTRUCTURE; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TEMPERATURE MEASUREMENT; TIN; VOLTAGE MEASUREMENT;

SCHOTTKY BARRIER DIODES;

EID: 1342284975     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/020     Document Type: Article

References (42)

1. Yamamoto A, Syouji A and Goto T 2000 J. Lumin. 87-89 207
2. Gouskov L, Gouskov A and Girault B 1978 Phys. Status Solidi A 47 195
3. Grandolfo M, Gratton E, Anfosso F A and Vecchla P 1971 Phys. Status Solidi B 48 720
4. Wan J Z, Brebner J L and Leonelli R 1996 Phys. Rev. B 53 15413
5. Wan J Z, Pollak F H, Brebner J L and Leonelli R 1997 Solid State Commun. 102 17
6. Brebner J L, Fischer G and Mooser E 1962 Phys. Chem. Solids 23 1417
7. Girlanda R, Grasso V and Mondio G 1986 Solid State Commun. 57 253
8. Shigetomi S, Ikari T and Nakashima H 1998 J. Lumin. 78 117
9. Taylor R A and Ryan J F 1987 J. Phys. C: Solid State Phys. 20 6175
10. Wan J Z, Brebner J L and Leonelli R 1995 Phys. Rev. B 52 16561
11. Wan J Z, Brebner J L, Leonelli R, Zhao G and Graham J T 1993 Phys. Rev. B 48 5197
12. Bassani F, Greenaway D L and Fischer G 1964 Proc. Int. Conf. Physics Semicond. Paris p 51
13. Fischer G and Brebner J L 1967 J. Phys. Chem. Solids 23 1363
14. Augelli V, Manfredotti C, Murri R, Piccolo R, Rizzo A and Vasanelli L 1977 Solid State Commun. 21 575
15. Shigetomi S, Ikari T and Nakashima H 1998 Japan. J. Appl. Phys. 37 3282
16. Aydinli A, Gasanly N M, Uka A and Efeoglu H 2002 Cryst. Res. Technol. 37 1303.
17. Bose D N and Pal S 1997 Phil. Mag. B 75 311
18. Almeida J, Berger H and Margaritondo G 1998 J. Appl. Phys. 84 1990
19. Coskun C, Biber M and Efeoglu H 2003 Appl. Surf. Sci. 211 360
20. Koma A and Yoshimura J 1986 J. Surf. Sci. 174 556
21. Teraguchi N, Kato F, Konagai M and Takahashi K 1991 J. Electron. Mater. 20 297
22. Song Y P, Van Meirhaeghe R L, Laflere W H and Cardon F 1986 Solid-State Electron. 29 633.
23. Crowell C R and Rideout V L 1969 Solid State Electron. 12 89
24. Hökelek E and Robinson G Y 1982 Appl. Phys. Lett. 40 426
25. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) p 292
26. Tung R T 1992 Phys. Rev. B 45 13509
27. Crowell C R 1977 Solid-State Electron. 20 171
28. Ohdomari I and Tu K N 1980 J. Appl. Phys. 51 3735
29. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru G P, Qu X P and Li B Z 2000 Solid-State Electron. 44 663
30. Tung R T 2001 Mater. Sci. Eng. R 35 1-138 and references therein
31. Coskun C and Efeoglu H 2003 Semicond. Sci. Technol. 18 23
32. Chung C K, Hwang J, Jaw T H and Wuu D S 2000 Thin Solid Films 373 68
33. Lang O, Schlaf R, Pettenkofer C and Jaegermann W 1994 J. Appl. Phys. 75 7805
34. Klein A, Lehmann J, Pettenkofer C, Jaegermann W, Lux-Steiner M and Bucher E 1993 Appl. Surf. Sci. 70-1 470
35. Van der Ziel A 1968 Solid State Physical Electronics 2nd edn (Englewood Cliffs, NJ: Prentice-Hall)
36. Güder H S, Abay B, Efeoǧlu H, Coskun C, Aydoǧan S and Yoǧurtçu Y K 2001 Turk. J. Phys. 25 523
37. Turut A, Saglam M, Efeoglu H, Yalcin N, Yildirim M and Abay B 1995 Physica B 205 41
38. Mönch W 1998 Appl. Phys. Lett. 72 1899
39. Turut A. Yalcin N and Saglam M 1992 Solid-State Electron. 35 835
40. Nuhoglu C, Aydogan S and Turut A 2003 Semicond. Sci. Technol. 18 642
41. Schroder D K 1998 Semiconductor Material and Device Characterization 2nd edn (New York: Wiley)
42. Rahman M A and Belal A E 2000 J. Phys. Chem. Solids 61 925