Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5014-5020

  Hirsch, L ^a   Barriere A S ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ETCHING; GALLIUM NITRIDE; LEAKAGE CURRENTS; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL TRANSPORT;

LIGHT EMITTING DIODES;

EID: 10744229551     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605252     Document Type: Review

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