Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures

Applied Physics A: Materials Science and Processing

Volumn 63, Issue 2, 1996, Pages 171-178

  Chand, Subhash ^a   Kumar, Jitendra ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; LOW TEMPERATURE PROPERTIES; PALLADIUM ALLOYS; THERMAL EFFECTS;

CURRENT TRANSPORT PROCESS; IDEALITY FACTOR; RICHARDSON CONSTANT; THERMIONIC EMISSION DIFFUSION MECHANISM; ZERO BIAS BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0030212014     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050368     Document Type: Article

References (30)