Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Bulbul M M ^a   Bengi, S ^a   Dokme I ^a   Altndal, S ^a   Tun T ^b  

^a GAZI UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; ELECTRIC PARAMETERS; FORWARD BIAS; HIGH FREQUENCY; INTERFACE STATE DENSITY; SERIES RESISTANCES; SI SCHOTTKY DIODE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; UNOBSERVABLE; VOLTAGE CHARACTERISTICS; W-VALUE;

CAPACITANCE; DIODES; SCHOTTKY BARRIER DIODES; ZINC;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955868545     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462427     Document Type: Article

References (38)

1. A. R. Brown, C. P. Jarret, D. M. de Leeuw, and M. Matters, Synth. Met. SYMEDZ 0379-6779 88, 37 (1997). 10.1016/S0379-6779(97)80881-8
2. B. K. Crone, A. Dodabalapur, R. Sarpeshkar, A. Gelperin, H. E. Katz, and Z. Bao, J. Appl. Phys. JAPIAU 0021-8979 91, 10140 (2002). 10.1063/1.1476084 (Pubitemid 34720169)
3. F. Gutman and L. E. Lyons, Organic Semiconductors (Wiley, New York, 1967).
4. J. Szatkowski and K. Sieranski, Solid-State Electron. SSELA5 0038-1101 35, 1013 (1992). 10.1016/0038-1101(92)90333-8
5. Z. Ouennoughi, Phys. Status Solidi A PSSABA 0031-8965 160, 127 (1997). 10.1002/1521-396X(199703)160:1<127::AID-PSSA127>3.0.CO;2-5
6. J. Zhang and F. Jiang, Chem. Phys. CMPHC2 0301-0104 289, 243 (2003). 10.1016/S0301-0104(03)00045-4
7. N. Dharmaraj, C. H. Kim, and H. Y. Kim, Synth. React. Inorg. Met.-Org. Chem. 36, 29 (2006).
8. G. V. Bazuev, O. I. Gyrdasova, I. G. Grigorov, and O. V. Koryakova, Inorg. Mater. INOMAF 0020-1685 41, 288 (2005). 10.1007/s10789-005-0125-x (Pubitemid 40579378)
9. H. Guan, C. Shao, S. Wen, B. Chen, J. Gong, and X. Yang, Mater. Chem. Phys. MCHPDR 0254-0584 82, 1002 (2003). 10.1016/j.matchemphys.2003.09.003
10. I. Uslu, B. Baer, A. Yayl, and M. L. Aksu, e-Polymers EPOLCI 1618-7229 145 (2007).
11. I. Uslu, H. Datan, A. Altas, A. Yayli, O. Atakol, and M. L. Aksu, e-Polymers EPOLCI 1618-7229 133 (2007).
12. H. Saito and B. Stuhn, Polymer POLMAG 0032-3861 35, 475 (1994). 10.1016/0032-3861(94)90499-5
13. M. M. Mosaad, J. Mater. Sci. Lett. JMSLD5 0261-8028 9, 32 (1990). 10.1007/BF00722860
14. A. H. Salama, M. Dawy, and A. M. A. Nada, Polymer-Plast. Technol. Eng. 43, 1067 (2004). 10.1081/PPT-200030024
15. R. F. Bhajantri, V. Ravindrachary, A. Harisha, C. Ranganathaiah, and G. N. Kumaraswamy, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 87, 797 (2007). 10.1007/s00339-007-3923-y (Pubitemid 46642218)
16. A. Shehap, A. Abdallah, A. F. Basha, and F. H. Abd el Kader, J. Appl. Polym. Sci. JAPNAB 0021-8995 68, 687 (1998). 10.1002/(SICI)1097-4628(19980502) 68:5<687::AID-APP1>3.0.CO;2-K
17. H. M. Zidan, J. Appl. Polym. Sci. JAPNAB 0021-8995 88, 104 (2003). 10.1002/app.11569
18. D.-H. Wang, Thin Solid Films THSFAP 0040-6090 288, 254 (1996). 10.1016/S0040-6090(96)08869-4
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
20. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
21. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1978).
22. P. Chattopadhyay and B. Raychaudhuri, Solid-State Electron. SSELA5 0038-1101 35, 1023 (1992). 10.1016/0038-1101(92)90337-C
23. B. ahin, H. etin, and E. Ayyldz, Solid State Commun. SSCOA4 0038-1098 135, 490 (2005). 10.1016/j.ssc.2005.05.050 (Pubitemid 41023730)
24. P. Chattopadhyay and B. Raychaudhuri, Solid-State Electron. SSELA5 0038-1101 36, 605 (1993). 10.1016/0038-1101(93)90272-R
25. P. Chattopadhyay and S. Sanyal, Appl. Surf. Sci. ASUSEE 0169-4332 89, 205 (1995). 10.1016/0169-4332(95)00020-8
26. M. M. Bülbül, S. Zeyrek, Altndal, and H. Yüzer, Microelectron. Eng. MIENEF 0167-9317 83, 577 (2006). 10.1016/j.mee.2005.12.013 (Pubitemid 43277463)
27. P. Chattopadhyay and A. N. Daw, Solid-State Electron. SSELA5 0038-1101 29, 555 (1986). 10.1016/0038-1101(86)90078-X
28. H. Norde, J. Appl. Phys. JAPIAU 0021-8979 50, 5052 (1979). 10.1063/1.325607
29. K. Sato and Y. Yasamura, J. Appl. Phys. JAPIAU 0021-8979 58, 3656 (1985).
30. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. APPLAB 0003-6951 49, 85 (1986). 10.1063/1.97359
31. E. H. Nicollian and J. R. Brews, Bell Syst. Tech. J. BSTJAN 0005-8580 46, 1055 (1967).
32. A. Tataroǧlu, Altndal, and M. M. Bülbül, Microelectron. Eng. MIENEF 0167-9317 81, 140 (2005). 10.1016/j.mee.2005.04.008 (Pubitemid 40929515)
33. K. K. Hung and Y. C. Cheng, J. Appl. Phys. JAPIAU 0021-8979 62, 4204 (1987). 10.1063/1.339091
34. W. A. Hill and C. C. Coleman, Solid-State Electron. SSELA5 0038-1101 23, 987 (1980). 10.1016/0038-1101(80)90064-7
35. Karata and A. Türüt, Vacuum VACUAV 0042-207X 74, 45 (2004). 10.1016/j.vacuum.2003.11.006
36. K. S. K. Kwa, S. Chattopadhyay, N. D. Jankovic, H. S. Olsen, L. S. Driscoll, and A. G. O'Neill, Semicond. Sci. Technol. SSTEET 0268-1242 18, 82 (2003). 10.1088/0268-1242/18/2/303
37. P. Cova, A. Singh, and R. A. Masut, J. Appl. Phys. JAPIAU 0021-8979 82, 5217 (1997). 10.1063/1.366386
38. N. Konofaos and E. K. Evangelou, Semicond. Sci. Technol. SSTEET 0268-1242 18, 56 (2003). 10.1088/0268-1242/18/1/308