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Materials Science in Semiconductor Processing

Volumn 14, Issue 2, 2011, Pages 139-145

Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

(5) Tunç, Tuncay a Altindal, Şemsettin b Uslu, Ibrahim b Dökme, Lbilge b Uslu, Habibe b

a AKSARAY UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

Author keywords

Barrier height; Electrospinning; Gaussian distribution; IVT characteristics; Poly(vinyl alcohol); Schottky barrier diodes

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; FORWARD BIAS; GAUSSIANS; I - V CURVE; IDEALITY FACTORS; INTERFACIAL LAYER; IV CHARACTERISTICS; IVT CHARACTERISTICS; MEAN VALUES; RICHARDSON CONSTANT; SEMICONDUCTOR LAYERS; STANDARD DEVIATION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THEORETICAL VALUES; ZERO-BIAS;

DIODES; GAUSSIAN DISTRIBUTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 79958142030 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2011.01.018 Document Type: Article

Times cited : (58)

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