The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 298-302

  Ozdemir A F ^a   Turut, A ^b   Kokce A ^a  

^a SULEYMAN DEMIREL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL MODIFICATION; GALLIUM COMPOUNDS; GOLD;

IDEALITY FACTOR; STANDARD DEVIATIONS;

SCHOTTKY BARRIER DIODES;

EID: 32944470330     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/016     Document Type: Article

References (37)

1. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn (Oxford: Clarendon)
2. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
3. Bobo J F, Couderc S, Arnoult A, Fontaine C and Mamy R 2004 Solid-State Electron. 48 845
4. Schmitsdorf R F, Kampen T U and Mönch W 1997 J. Vac. Sci. Technol. B 15 1221
5. Sullivan J P, Tung R T, Pinto M R and Graham W R 1991 J. Appl. Phys. 70 7403
6. Tung R T 1992 Phys. Rev. B 45 13509
7. Tung R T 2001 Mater. Sci. Eng. R 35 1-138
8. Song Y P, Van Meirhaeghe R L, Laflére W H and Cardon F 1986 Solid-State Electron. 29 633
9. Werner J H and Guttler H H 1991 J. Appl. Phys. 69 1522
10. Chand S and Kumar J 1995 Semicond. Sci. Technol. 10 1680
11. Chand S and Bala S 2005 Appl. Surf. Sci. 252 358
12. Chand S and Kumar J 1996 Semicond. Sci. Technol. 11 1203
13. Chand S and Kumar J 1997 Appl. Phys. A: Mater. Sci. Process. 65 171
14. Karataş Ş, Altindal Ş, Türüt A and Özmen A 2003 Appl. Surf. Sci. 217 250
15. Dobrocka E and Osvald J 1994 Appl. Phys. Lett. 65 575
16. Anand S, Carlsson S-B, Deppert K, Montelius L and Samuelson L 1996 J. Vac. Sci. Technol. B 14 2794
17. Im H J, Ding Y, Pelz J P and Choyke W J 2001 Phys. Rev. B 64 075310
18. Kampen T U and Mönch W 1995 Surf. Sci. 331-3 490
19. Morgan B A, Talin A A, Bi W G, Kavanagh K L, Williams R S, Tu C W, Yasuda T, Yasui T and Segawa Y 1996 Mater. Chem. Phys. 46 224
20. Vanalme G M, Goubert L, Van Meirhaeghe R L, Cardon F and van Daele P 1999 Semicond. Sci. Technol. 14 871
21. Vanalme G M, Van Meirhaeghe R L, Cardon F and van Daele P 1997 Semicond. Sci. Technol. 12 907
22. Zhu S, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru G P, Qu X P and Li B Z 2000 Solid-State Electron. 44 663
23. Zhu S, Van Meirhaeghe R L, Forment S, Ru G P and Li B Z 2004 Solid-State Electron. 48 29
24. Jiang Y L, Ru G P, Lu F, Qu X P, Li B Z and Yang S 2003 J. Appl. Phys. 93 866
25. Osvald J and Horvath Z J 2004 Appl. Surf. Sci. 234 349-54
26. Jones F E, Wood B P, Myers J A, Daniels C H and Lonergan M C 1999 J. Appl. Phys. 86 6431
27. Jones F E and Lonergan M C 2001 J. Chem. Phys. 115 433
28. Rossi R C, Tan M X and Lewis N S 2000 Appl. Phys. Lett. 77 2698
29. Hardikar S, Hudait M K, Modak P, Krupanidhi S B and Padha N 1999 Appl. Phys. A: Mater. Sci. Process. 68 49
30. Horvath Zs J, Adam M, Cs Dusco, Pinter I, Van Tuyen V, Barsony I, Gombia E, Mosca R and Makaro Zs 1998 Solid-State Electron. 42 221
31. Cetin H and Ayyildiz E 2005 Semicond. Sci. Technol. 20 625
32. Sehgal B K, Balakrishnan V R, Gulati R and Tewari S P 2003 J. Semicond. Technol. Sci. 3 1-12
33. Horváth Zs J 1996 Solid-State Electron. 39 176
34. Gümüş A, Türüt A and Yalcin N 2002 J. Appl. Phys. 91 245
35. Biber M 2003 Physica B 325 138
36. Karataş Ş and Altindal Ş 2005 Mater. Sci. Eng. B 122 133
37. Tung R T, Levi A F J, Sullivan J P and Schrey F 1991 Phys. Rev. Lett. 66 72