The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

Current Applied Physics

Volumn 12, Issue 2, 2012, Pages 525-530

  Gokcen M ^a   Tunc T ^b   Altndal, S ^c   Uslu, I ^c  

^a DUZCE UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

Bi2O3 doped PVA; I V characteristics; Metal polymer semiconductor (MPS); Series resistance effect

Indexed keywords

BARRIER HEIGHTS; BIAS DEPENDENCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL LAYER; IV CHARACTERISTICS; METAL-POLYMER-SEMICONDUCTOR (MPS); ROOM TEMPERATURE; SERIES RESISTANCE EFFECT; SERIES RESISTANCES; ZERO-BIAS;

BISMUTH; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RESISTANCE; POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

SCHOTTKY BARRIER DIODES;

EID: 81155133703     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.08.012     Document Type: Article

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