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Journal of Materials Science

Volumn 45, Issue 20, 2010, Pages 5468-5471

Temperature-dependent barrier height in CdSe Schottky diode

(1) Tripathi, S K a

a PANJAB UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIODES; II-VI SEMICONDUCTORS; INTERFACE STATES; ITO GLASS; OHMIC CONTACTS; PARTICLE SIZE; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SUBSTRATES; THERMAL EVAPORATION; THERMIONIC EMISSION;

AVERAGE PARTICLE SIZE; DIFFERENT FREQUENCY; IV CHARACTERISTICS; NON-OHMIC CONTACTS; TEMPERATURE DEPENDENT; THERMAL EVAPORATION TECHNIQUE; THERMIONIC EMISSION THEORY; XRD MEASUREMENTS;

CADMIUM COMPOUNDS;

EID: 77956492288 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-010-4601-6 Document Type: Article

Times cited : (49)

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