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Journal of Alloys and Compounds

Volumn 507, Issue 1, 2010, Pages 190-195

Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

(7) Uslu, H a Bengi, A a Cetin S S a Aydemir, U a Altindal, S a Aghaliyeva, S T b Ozelik S a

a GAZI UNIVERSITY (Turkey)

b INSTITUTE OF PHYSICS (Azerbaijan)

Author keywords

Current transport mechanism; I V T characteristics; QW lasers

Indexed keywords

APPLICATION FIELDS; BARRIER HEIGHTS; ELECTRICAL PARAMETER; FORWARD BIAS; GAAS/ALGAAS; GENERATION-RECOMBINATION; HIGH-TEMPERATURE REGIME; I-V-T CHARACTERISTICS; IDEALITY FACTORS; IMAGE FORCE; INTERFACE STATE; IV CHARACTERISTICS; LINEAR REGION; LOW TEMPERATURES; METAL/SEMICONDUCTOR INTERFACE; QUANTUM WELL; QW LASERS; SATURATION CURRENT; SCLC MECHANISM; SERIES RESISTANCES; SINGLE-QUANTUM-WELL LASER; SPACE CHARGE REGIONS; TEMPERATURE INTERVALS; TEMPERATURE RANGE; THERMIONIC FIELD EMISSION; TOTAL CURRENT; TRANSPORT MECHANISM; TUNNELING CURRENT; ZERO-BIAS;

ACTIVATION ENERGY; BIAS VOLTAGE; FIELD EMISSION; OPTOELECTRONIC DEVICES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 77956615359 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.07.152 Document Type: Article

Times cited : (49)

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