Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0)

Journal of Alloys and Compounds

Volumn 485, Issue 1-2, 2009, Pages 467-472

  Janardhanam, V ^a   Ashok Kumar, A ^a   Rajagopal Reddy, V ^a   Narasimha Reddy, P ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Barrier height; C V T characteristics; Gaussian distribution; I V T characteristics; Schottky contacts

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; DIODE PARAMETERS; ELECTRICAL CHARACTERISTIC; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; IDEALITY FACTORS; INP; IV CHARACTERISTICS; METAL SEMICONDUCTOR INTERFACE; RICHARDSON CONSTANT; RICHARDSON PLOT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STANDARD DEVIATION; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; V-T CHARACTERISTICS; ZERO-BIAS;

CAPACITANCE; GAUSSIAN DISTRIBUTION; MOLYBDENUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 72049092912     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.05.141     Document Type: Article

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