Investigation of the electrical properties of a surface-type Al/NiPc/Ag Schottky diode using I-V and C-V characteristics

Physica B: Condensed Matter

Volumn 405, Issue 4, 2010, Pages 1188-1192

  Shah, Mutabar ^a   Sayyad, M H ^a   Karimov, Kh S ^a,b   Maroof Tahir, M ^c  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

^b Academy of Sciences of the Republic of Tadzhikistan   (Tajikistan)

^c ST CLOUD STATE UNIVERSITY   (United States)

Author keywords

Capacitance voltage (C V) characteristics; Current voltage (I V) characteristics; Nickel phthalocyanine (NiPc); Organic semiconductor; Schottky diode; Surface type; Thin films

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; NICKEL PHTHALOCYANINES; ORGANIC SEMICONDUCTOR; SCHOTTKY DIODE; SCHOTTKY DIODES;

CAPACITANCE; CARRIER CONCENTRATION; NICKEL ALLOYS; NITROGEN COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DIODES; THERMAL EVAPORATION; THIN FILMS; VACUUM EVAPORATION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 74149084418     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.11.034     Document Type: Article

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