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Volumn 85, Issue 11, 2008, Pages 2316-2321

The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

Author keywords

Al0.3Ga0.7N AlN GaN heterostructures; Interface states; Nitride passivation; Series resistance; Temperature dependence

Indexed keywords

AL0.3GA0.7N/ALN/GAN HETEROSTRUCTURES; INTERFACE STATES; NITRIDE PASSIVATION; SERIES RESISTANCE; TEMPERATURE DEPENDENCE;

EID: 53849109903     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.08.005     Document Type: Article
Times cited : (26)

References (60)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.