Characteristics of Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottky barrier diodes

Crystal Research and Technology

Volumn 36, Issue 6, 2001, Pages 571-576

  Venkata Rao, G ^a   Hema Chandra, G ^a   Hussain, O M ^a   Uthanna, S ^a   Srinivasulu Naidu, B ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Capacitance voltage; Cu0.5Ag0.5InSe2 thin films; Current voltage; Photoresponse; Schottky barrier diodes

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; THIN FILMS;

COPPER SILVER INDIUM SELLENIDE; PHOTORESPONSE;

SCHOTTKY BARRIER DIODES;

EID: 20644433748     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200107)36:6<571::AID-CRAT571>3.0.CO;2-R     Document Type: Article

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