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Volumn 40, Issue 2, 2011, Pages 157-164

Anomalous peak in the forward-bias C-V plot and temperature-dependent behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) structures

Author keywords

Anomalous peak; interface states; series resistance; temperature dependence

Indexed keywords

ADMITTANCE SPECTROSCOPIES; ANOMALOUS PEAK; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DEPLETION REGION; DOPING CONCENTRATION; ELECTRICAL PARAMETER; ELECTRONIC PARAMETERS; EXPERIMENTAL DATA; FORWARD BIAS; IDEALITY FACTORS; INTERFACE STATES; INTERFACIAL POLYMERS; MEAN DENSITY; NEGATIVE BIAS; PEAK POSITION; PEAK VALUES; SERIES RESISTANCE; SERIES RESISTANCES; SI (1 1 1); TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; ZERO-BIAS;

EID: 79951512497     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1440-9     Document Type: Article
Times cited : (68)

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