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Volumn 109, Issue 5, 2011, Pages

Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BIAS DEPENDENCE; FERMI ENERGY LEVELS; FORWARD BIAS; FREE CHARGE; HIGH VOLTAGE; I-V MEASUREMENTS; INTERFACE STATE; INTERSECTION POINTS; IV CHARACTERISTICS; LOW TEMPERATURES; NEGATIVE VOLTAGE; OHM'S LAW; ORDER OF MAGNITUDE; REVERSE BIAS; SERIES RESISTANCES; SHUNT RESISTANCES; TEMPERATURE DEPENDENT ENERGY; TEMPERATURE RANGE; TEMPERATURE REGIONS; ZERO-BIAS;

EID: 79953006677     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3552599     Document Type: Article
Times cited : (54)

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