Extraction of electronic parameters of Schottky diode based on an organic Indigotindisulfonate Sodium (IS)

Solid State Communications

Volumn 150, Issue 33-34, 2010, Pages 1592-1596

  Aydoǧan, Şakir ^a   Üncekara, Imit ^a   Deniz, A R ^a   Türüt, Abdulmecit ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

B. Carmine; D. Interface states; D. Schottky diode; D. Series resistance

Indexed keywords

ALTERNATING CURRENT; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; ELECTRONIC PARAMETERS; FORWARD BIAS; HIGH FREQUENCY; IDEALITY FACTORS; INTERFACE STATE; IV CHARACTERISTICS; JUNCTION PARAMETERS; PHYSICAL BARRIERS; ROOM TEMPERATURE; SCHOTTKY DIODES; SERIES RESISTANCES;

CAPACITANCE; METAL RECOVERY; SCHOTTKY BARRIER DIODES; SODIUM;

SEMICONDUCTOR DIODES;

EID: 77955417901     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.05.043     Document Type: Article

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