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Volumn 39, Issue 1, 1996, Pages 176-178

Comment on 'analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range'

(1)  Anon, a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PROPERTIES; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

EID: 0029735263     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00148-M     Document Type: Article
Times cited : (63)

References (27)
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    • Zs.J. Horváth 2nd Edn Mater. Res. Soc. Symp. Proc. 260 1992 359
    • (1992) , pp. 359
    • Horváth, Zs.J.1
  • 8
    • 85114531294 scopus 로고
    • E.H. Rhoderick 2nd Edn Metal-Semiconductor Contacts 1978 Clarendon Press Oxford Chaps 3.3.1 and 4.1.2
    • (1978)
    • Rhoderick, E.H.1
  • 9
    • 85114537547 scopus 로고
    • S.M. Sze 2nd Edn Physics of Semiconductor Devices 1981 App. H. Wiley New York Chaps 1.4.1, 1.4.2, 5.2.2., 5.4.1, 5.4.4.
    • (1981)
    • Sze, S.M.1
  • 15
    • 85114539142 scopus 로고
    • T.L. Tansley C.I. Pedersen E.L. Dellow Proc. Int. Symp. on GaAs Dallas, TX 1969 The Institute of Physics and The Physical Society London 222
    • (1969) , pp. 222
    • Tansley, T.L.1
  • 17
    • 85114539534 scopus 로고    scopus 로고
    • J. Karányi, unpublished.
  • 18
    • 85114542954 scopus 로고    scopus 로고
    • G. Gombos, private communication.
  • 21
    • 85114538345 scopus 로고
    • J. Karányi B. Szentpáli A. Rusu Proc. 17th Annual Semicond. Conf. CAS'94, Siania, Rumania Vol. 1 1994 Research Institute for Electronic Components, Rumanian Academy of Sciences Bucharest 81
    • (1994) , pp. 81
    • Karányi, J.1    Szentpáli, B.2
  • 23
    • 85114541452 scopus 로고
    • E.H. Rhoderick IEE Proc. Pt. 1 129 1982 1
    • (1982) , pp. 1
    • Rhoderick, E.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.