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Volumn 39, Issue 1, 1996, Pages 176-178
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Comment on 'analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range'
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC FIELDS;
MATHEMATICAL MODELS;
SEMICONDUCTING SILICON COMPOUNDS;
SURFACE PROPERTIES;
THERMAL EFFECTS;
VOLTAGE MEASUREMENT;
APPARENT BARRIER HEIGHT;
SCHOTTKY JUNCTIONS;
TEMPERATURE IDEALITY FACTORS;
THERMIONIC FIELD EMISSION;
SEMICONDUCTOR JUNCTIONS;
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EID: 0029735263
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(95)00148-M Document Type: Article |
Times cited : (63)
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References (27)
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