Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

Semiconductor Science and Technology

Volumn 27, Issue 9, 2012, Pages

  Liu, Jifeng ^a   Kimerling, Lionel C ^b   Michel, Jurgen ^b  

^a DARTMOUTH COLLEGE   (United States)

^b Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; ANTI-QUENCHING; CMOS COMPATIBLE; COMMUNICATION WAVELENGTHS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIRECT-GAP SEMICONDUCTOR; ELECTRICAL PUMPING; ELECTRICALLY PUMPED; EMISSION INTENSITY; ENERGY DIFFERENCES; FUTURE GENERATIONS; GAIN SPECTRA; GAP TRANSITION; HISTORICAL REVIEW; INDIRECT BAND GAP; LIGHT EMITTERS; LIGHT EMITTING DEVICES; MATERIAL GROWTH; MONOLITHIC INTEGRATION; MONOLITHIC LASERS; MW OUTPUT; N-TYPE DOPING; ON CHIPS; RESEARCH FIELDS; SI PHOTONICS; SILICON-BASED; THEORETICAL MODELING; UNIQUE FEATURES;

COMMUNICATION SYSTEMS; GERMANIUM; LIGHT EMISSION; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL GAIN; OPTICALLY PUMPED LASERS; PHOTONIC INTEGRATION TECHNOLOGY; PUMPING (LASER); SEMICONDUCTOR LASERS; SILICON;

PHOTONICS;

EID: 84865417941     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/9/094006     Document Type: Review

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