Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

Optics Express

Volumn 15, Issue 18, 2007, Pages 11272-11277

  Liu, Jifeng ^a   Sun, Xiaochen ^a   Pan, Dong ^a   Wang, Xiaoxin ^a   Kimerling, Lionel C ^a   Koch, Thomas L ^b   Michel, Jürgen ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; LASER APPLICATIONS; LIGHT ABSORPTION; OPTICAL GAIN; SILICON; STRAIN;

CARRIER ABSORPTION; CONDUCTION BAND VALLEYS; ENERGY DIFFERENCE;

GERMANIUM;

EID: 34548402181     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.011272     Document Type: Article

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