Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

Nanotechnology

Volumn 22, Issue 37, 2011, Pages

  Scappucci, G ^a   Capellini, G ^b   Klesse, W M ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY NUMBER; ATOMIC LEVEL CONTROL; ATOMIC-LAYER DOPING; DOPANT REDISTRIBUTION; DOPED LAYERS; P-LAYER; PHOSPHINE ADSORPTION; SHEET RESISTIVITY;

ADSORPTION; ATOMS; DOPING (ADDITIVES); PHOSPHORUS; PHOSPHORUS COMPOUNDS;

GERMANIUM;

EID: 80052182984     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/37/375203     Document Type: Article

References (21)

1. Shang H, Frank M M, Gusev E P, Chu J O, Bedell S W, Guarini K W and Ieong M 2006 IBM J. Res. Dev. 50 377-86
2. Kamata Y 2008 Mater. Today 11 30-8
3. Chui C O, Kulig L, Moran J, Tsai W and Saraswat K C 2005 Appl. Phys. Lett. 87 091909
4. Liu J, Sun X, Pan D, Wang X, Kimerling L C, Koch T L and Michel J 2007 Opt. Express 15 11272-7
5. Liu J F, Sun X C, Camacho-Aguilera R, Kimerling L C and Michel J 2010 Opt. Lett. 35 679-81
6. Tillack B 1998 Thin Solid Films 318 1-5
7. Ho J C, Yerushalmi R, Jacobson Z A, Fan Z, Alley R L and Javey A 2008 Nature Mater. 7 62-7
8. Tillack B, Yamamoto Y, Bolze D, Heinemann B, Rucker H, Knoll D, Murota J and Mehr W 2006 Thin Solid Films 508 279-83
9. Yamamoto Y, Kopke K, Kurps R, Murota J and Tillack B 2010 Thin Solid Films 518 S44-7
10. McKibbin S R, Clarke W R, Fuhrer A, Reusch T C G and Simmons M Y 2009 Appl. Phys. Lett. 95 133111
11. Scappucci G, Capellini G and Simmons M Y 2009 Phys. Rev. B 80 233202
12. McKibbin S R, Clarke W R, Fuhrer A and Simmons M Y 2010 J. Cryst. Growth 312 3247-50
13. Scappucci G, Capellini G, Klesse W M and Simmons M Y 2011 J. Cryst. Growth 316 81-4
14. Scappucci G, Capellini G, Lee W C T and Simmons M Y 2009 Appl. Phys. Lett. 94 162106
15. Miotto R 2002 Braz. J. Phys. 32 392
16. Scappucci G, Capellini G, Johnston B, Klesse W M, Miwa J A and Simmons M Y 2011 Nano Lett. 11 2272-9
17. Schubert E F 1996 Delta-doping of Semiconductors (London: Cambridge University Press)
18. Koffel S et al 2011 Microelectron. Eng. 88 458-61
19. Gaudet S, Detavernier C, Kellock A J, Desjardins P and Lavoie C 2006 J. Vac. Sci. Technol. A 24 474-85
20. Hikami S, Larkin A I and Nagaoka Y 1980 Prog. Theor. Phys. 63 707-10
21. Goh K E J, Augarten Y, Oberbeck L and Simmons M Y 2008 Appl. Phys. Lett. 93 142105