Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 660-662

  Liu, Jifeng ^a   Cannon, Douglas D ^a   Wada, Kazumi ^a   Ishikawa, Yasuhiko ^a   Jongthammanurak, Samerkhae ^a   Danielson, David T ^a   Michel, Jurgen ^a   Kimerling, Lionel C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; SILICIDATION; TENSILE STRAIN;

CHEMICAL VAPOR DEPOSITION; COOLING; EPITAXIAL GROWTH; LITHOGRAPHY; MOS DEVICES; PHOTODETECTORS; PHOTONS; SHRINKAGE; SILICON WAFERS; SINGLE CRYSTALS; STRAIN; TENSILE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

GERMANIUM;

EID: 1242331800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644618     Document Type: Article

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