Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si

Solid State Phenomena

Volumn 178-179, Issue , 2011, Pages 25-30

  Arguirov, Tzanimir ^a,b   Kittler, Martin ^a,b   Oehme, Michael ^c   Abrosimov, Nikolay V ^d   Kasper, Erich ^c   Schulze, Jörg ^c  

^a HP GmbH   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Dislocations; Ge; Light emitter; Luminescence

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); EMISSION SPECTROSCOPY; INDIUM ANTIMONIDES; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; ANTIMONY COMPOUNDS; ENERGY GAP; GERMANIUM; III-V SEMICONDUCTORS; RED SHIFT;

ACTIVE REGIONS; BAND-GAP EMISSION; BAND-TO-BAND TRANSITION; BULK MATERIALS; DIRECT TRANSITION; ELECTRONIC TRANSITION; EMISSION SPECTRUMS; ENERGY RANGES; EXCITATION CURRENTS; GE FILMS; HIGH QUALITY; LIGHT EMITTER; NONRADIATIVE PROCESS; P-I-N STRUCTURE; POWER LOW; RADIATION INTENSITY; RECOMBINATION RATE; RED SHIFT; ROOM TEMPERATURE; SI SUBSTRATES; SI-BASED LEDS; STRESS FREE; SUBMICROMETERS; THREADING DISLOCATION DENSITIES; LIGHT EMITTERS;

GERMANIUM; GERMANIUM COMPOUNDS;

EID: 80053288435     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.178-179.25     Document Type: Conference Paper

References (14)

1. M. Kittler, M. Reiche, X. Yu, T. Arguirov et al., IEDM Technical Digest (2006), pp. 845-848.
2. J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, J. Michel, Opt. Lett. 35, 679 (2010).
3. S.-L.Cheng, J. Lu, G. Shambat, H-Y Yu, K. Saraswat, et al., Opt. Express 17, 10019 (2009).
4. M. Kittler, T. Arguirov, M. Oehme, E. Kasper, J. Schulze "Room temperature 1.55 μm EL from unstrained i-Ge LED on Si", 218th ECS Meeting 2010, Las Vegas / USA, Symposium Optoelectronics I, 13 Oct 2010.
5. E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, J. Schulze "Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes", 7th Int. Conference on Group IV.
6. R. Soref, J. Kouvetakis, and J. Menendez, Mat. Res. Soc. Symp. Proc. 958, 13 (2007).
7. M. El Kurdi, T. Kociniewski, T.-P. Ngo et al., Appl. Phys. Lett. 94, 191107 (2009).
8. E. Kamieniecki, J. Phys. C: Solid State Phys. 9, 1211 (1976).
9. T. Arguirov, M. Kittler, N. Abrosimov, J. Phys.: Conference Series 281, 012021 (2011).
10. M. Kittler, T. Arguirov, M. Oehme, Y. Yamamoto et al., phys. stat. sol. (a) 208, 754 (2011).
11. M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin et al., 108, 023105 (2010).
12. M. Oehme, J. Werner, M. Kaschel, O. Kirfel, E. Kasper, Thin Solid Films 517, 137 (2008).
13. R. Haynes, Phys. Rev. 98, 1866 (1955).
14. S. Shevchenko, A. Tereshchenko, phys. stat. sol. (c) 4, 2898 (2007).