Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

Journal of Crystal Growth

Volumn 347, Issue 1, 2012, Pages 37-44

  Hartmann, J M ^a   Barnes, J P ^a   Veillerot, M ^a   Fedeli J M ^a   Benoit A La Guillaume, Q ^b   Calvo, V ^b  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

A1: Diffusion; A1: Doping; A1: Stresses; A1: Surface structure; A3: Chemical vapor deposition processes; B2: Semiconducting germanium

Indexed keywords

ATOMIC CONCENTRATION; ATOMIC DEPTH PROFILES; BANDGAP PEAK; CHEMICAL VAPOR DEPOSITION PROCESS; CRYSTALLINE QUALITY; ELECTRICAL AND OPTICAL PROPERTIES; FOUR-POINT PROBE MEASUREMENTS; HIGH CONCENTRATION; HIGH TEMPERATURE; IN-LINE; IN-SITU; OPTICAL QUALITIES; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI(0 0 1);

ATOMS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GROWTH TEMPERATURE; OPTICAL PROPERTIES; PHOSPHORUS; SURFACE SEGREGATION; X RAY DIFFRACTION;

GERMANIUM;

EID: 84859097858     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.023     Document Type: Article

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