Toward a germanium laser for integrated silicon photonics

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 124-131

  Sun, Xiaochen ^a   Liu, Jifeng ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Integrated optoelectronics; Light emitters; Silicon photonics

Indexed keywords

BAND GAPS; DESIGN GUIDELINES; EFFECT OF STRAIN; ELECTRICALLY PUMPED DEVICES; GAIN MEDIUM; GE/SI HETEROJUNCTION; GERMANIUM LASERS; LIGHT EMITTERS; N-TYPE DOPING; SILICON PHOTONICS; STRAIN ENGINEERING;

ELECTRIC PROPERTIES; GERMANIUM; HETEROJUNCTIONS; LIGHT EMISSION; OPTICAL SENSORS; PHOTONIC DEVICES;

OPTICAL COMMUNICATION;

EID: 76949087588     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2027445     Document Type: Article

References (25)

1. M. E. Groenert, C. W. Leitz, A. J. Pitera, V. Yang, H. Lee, R. J. Ram, and E.A. Fitzgerald, "Monolithic integration of room-temperature GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers," J. Appl. Phys., vol.93, pp. 362-367, 2003.
2. A.W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Exp., vol.14, pp. 9203-9210, 2006.
3. J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si," Opt. Exp., vol.15, pp. 11272-11277, 2007.
4. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Direct gap photoluminescence of n-type tensile-strained Ge-on-Si," Appl. Phys. Lett., vol.95, 011911, 2009.
5. X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, "Bandengineered Ge as gain medium for Si-based lasers," presented at the Integr. Photon. Nanophoton. Res. Appl., Boston, MA, 2008, Paper IMC5.
6. J. Liu, X. Sun, L. C. Kimerling, and J. Michel, "Towards a Ge-based laser for CMOS applications," in Proc. 5th IEEE Int. Conf. Group IV Photon., Sorrento, Italy, Sep. 2008, pp. 16-18, (IEEE Catalog No. CFP08GFPCDR).
7. J. Liu, X. Sun, L. C. Kimerling, and J. Michel, "Direct gap optical gain of Ge-on-Si at room temperature," Opt. Lett., vol.34, pp. 1738-1740, 2009.
8. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Room temperature direct band gap electroluminesence from Ge-on-Si light emitting diodes," Opt. Lett., vol.34, pp. 1198-1200, 2009.
9. P. H. Lim, Y. Kobayashi, S. Takita, Y. Ishikawa, and K.Wada, "Enhanced photoluminescence from germanium-based ring resonators," Appl. Phys. Lett., vol.93, pp. 041103-1-041103-3, 2008.
10. J. R. Haynes and N. G. Nilsson, "The direct radiative transitions in germanium and their use in the analysis of lifetime," in Proc. VIIth Int. Conf. Phys. Semicond., Paris, France, 1964, p. 21.
11. C. G. V. deWalle, "Band lineups and deformation potentials in the modelsolid theory," Phys. Rev. B, vol.39, pp. 1871-1883, 1989.
12. J. Liu, D. D. Cannon, Y. Ishikawa, K.Wada, D. T. Danielson, S. Jongthammanurak, J.Michel, and L.C.Kimerling, "Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100)," Phys. Rev. B, vol.70, pp. 155309-1-155309-5, 2004.
13. Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, and E. A. Fitzgerald, "Growth of highly tensile-strained Ge on relaxed InxGa1xAs by metal-organic chemical vapor deposition," J. Appl. Phys., vol.104, pp. 084518-1-084518-9, 2008.
14. Y. Ishikawa, K.Wada, D. D. Cannon, J. Liu, H. Luan, and L. C. Kimerling, "Strain-induced band gap shrinkage in Ge growth on Si substrate," Appl. Phys. Lett., vol.82, pp. 2044-2046, 2003.
15. H.-C. Luan, D. R. Lim, K. K. Lee, K.M. Chen, J. G. Sandland, K.Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threadingdislocation densities," Appl. Phys. Lett., vol.75, pp. 2909-2911, 1999.
16. D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J.Michel, and L. C. Kimerling, "Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications," Appl. Phys. Lett., vol.84, pp. 906-908, 2004.
17. Y. Ishikawa,K.Wada, J. F. Liu, D. D. Cannon, H. C. Luan, J.Michel, and L. C. Kimerling, "Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate," J. Appl. Phys., vol.98, pp. 013501-1-013501-9, 2005.
18. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Appl. Phys. Lett., vol.87, pp. 011110-1-011110-3, 2005.
19. J. Liu, J. Michel,W. Giziewicz, D. Pan, K.Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner, and J. Yasaitis, "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett., vol.87, pp. 103501-1-103501-3, 2005.
20. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, "Silicidation-induced band gap shrinkage in Ge epitaxial films on Si," Appl. Phys. Lett., vol.84, pp. 660-662, 2004.
21. W. G. Spitzer, F. A. Trumbore, and R. A. Logan, "Properties of heavily doped n-type germanium," J. Appl. Phys., vol.32, pp. 1822-1830, 1961.
22. R. Newman and W. W. Tyler, "Effect of impurities on free-hole infrared absorption in p-type germanium," Phys. Rev., vol.105, pp. 885-886, 1957.
23. M. Levinstein, S. Rumyantsev, and M. Shur, Eds., Handbook Series on Semiconductor Parameters. Singapore: World Scientific, 1996.
24. R. Conradt and J. Aengenheister, "Minority carrier lifetime in highly doped Ge," Solid State Commun., vol.10, pp. 321-323, 1972.
25. S. Marchetti, M. Martinelli, R. Simili, M. Giorgi, and M. Fantoni, "Measurement of Ge electrical parameters by analyzing its optical dynamics," Phys. Scr., vol.64, pp. 509-511, 2001.